- 专利标题： Semiconductor device including a semiconductor sheet interconnecting a source region and a drain region
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申请号： US14557894申请日： 2014-12-02
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公开(公告)号： US09711596B2公开(公告)日： 2017-07-18
- 发明人: Hao-Ling Tang , Jon-Hsu Ho , Shao-Hwang Sia , Wen-Hsing Hsieh , Ching-Wei Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L45/00 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L27/088 ; H01L29/45 ; H01L21/306 ; H01L29/423
摘要：
A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.
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