Invention Grant
- Patent Title: Quantum cascade laser
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Application No.: US15205610Application Date: 2016-07-08
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Publication No.: US09711944B2Publication Date: 2017-07-18
- Inventor: Jun-ichi Hashimoto , Manabu Shiozaki , Hiroyuki Yoshinaga
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2015-137922 20150709
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/125 ; H01S5/34 ; H01S5/343 ; H01S5/026 ; H01S5/227 ; H01S5/22 ; H01S5/024

Abstract:
A quantum cascade laser includes a substrate having a principal surface; a laser body region disposed on the principal surface, the laser body region including a semiconductor laminate structure having an end facet, the laser body region having a waveguide structure extending along a waveguide axis; and a distributed Bragg reflection region disposed on the principal surface, the distributed Bragg reflection region including low and high refractive index portions that are alternately arranged in a direction of the waveguide axis. The end facet of the semiconductor laminate structure is optically coupled to the distributed Bragg reflection region. Each of the high refractive index portions includes a semiconductor wall including upper and lower portions that are arranged in a direction intersecting with the principal surface of the substrate. The principal surface is disposed between the upper and lower portions. The lower portion includes a part of the substrate.
Public/Granted literature
- US20170012408A1 QUANTUM CASCADE LASER Public/Granted day:2017-01-12
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