Invention Grant
- Patent Title: Architecture to improve write-ability in SRAM
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Application No.: US15269620Application Date: 2016-09-19
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Publication No.: US09721650B1Publication Date: 2017-08-01
- Inventor: Pradeep Raj , Sharad Kumar Gupta , Rahul Sahu , Lakshmikantha Holla Vakwadi
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox, LLP and Qualcomm, I
- Main IPC: G11C11/412
- IPC: G11C11/412 ; G11C11/419
Abstract:
A memory and apparatus are disclosed. The memory includes a memory core having a plurality of memory cells. The memory also includes a first write assist circuit configured to assist writing to a first group of the plurality of memory cells of the memory core. Additionally, the memory includes a second write assist circuit configured to assist writing to a second group of the plurality of memory cells of the memory core. The apparatus includes at least one processor. The apparatus also includes a memory array. The memory array includes a memory core having a plurality of memory cells. The memory also includes a first write assist circuit configured to assist writing to a first group of the plurality of memory cells of the memory core and a second write assist circuit configured to assist writing to a second group of the plurality of memory cells of the memory core.
Information query
