Invention Grant
- Patent Title: Wafer bonding method and device with reduced thermal expansion
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Application No.: US14860721Application Date: 2015-09-22
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Publication No.: US09721824B2Publication Date: 2017-08-01
- Inventor: Kuan-Wei Chen , Pei-Jer Tzeng , Chien-Chou Chen , Po-Chih Chang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW104115136A 20150513
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L29/06 ; H01L21/78 ; H01L21/50 ; H01L23/544
Abstract:
A bonding structure including a first substrate, a second substrate, and an adhesive layer is provided. The first substrate has a plurality of first trenches. The adhesive layer is located between the first substrate and the second substrate, and the first trenches are filled with the adhesive layer.
Public/Granted literature
- US20160336211A1 BONDING STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND DIE STRUCTURE Public/Granted day:2016-11-17
Information query
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