Invention Grant
- Patent Title: Integrated circuit devices and methods
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Application No.: US15378633Application Date: 2016-12-14
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Publication No.: US09721891B2Publication Date: 2017-08-01
- Inventor: Jeffrey Junhao Xu , Junjing Bao , John Jianhong Zhu , Stanley Seungchul Song , Niladri Narayan Mojumder , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated—Toler
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L21/768
Abstract:
An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes an aluminum oxide barrier layer. The aluminum oxide barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.
Public/Granted literature
- US20170092587A1 INTEGRATED CIRCUIT DEVICES AND METHODS Public/Granted day:2017-03-30
Information query
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