Invention Grant
- Patent Title: Thin film transistor substrate and display using the same
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Application No.: US14629554Application Date: 2015-02-24
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Publication No.: US09721973B2Publication Date: 2017-08-01
- Inventor: Youngjang Lee , Kyungmo Son , Sohyung Lee , Hoyoung Jung , Moonho Park , Sungjin Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2014-0021500 20140224; KR10-2014-0021515 20140224; KR10-2015-0025169 20150223
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L27/32

Abstract:
Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.
Public/Granted literature
- US20150243683A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME Public/Granted day:2015-08-27
Information query
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