公开(公告)号：US10170049B2

公开(公告)日：2019-01-01

申请号：US15274003

申请日：2016-09-23

Applicant: LG Display Co., Ltd.

Inventor： Sungbin Ryu ,  Youngjang Lee

IPC: G09G3/3258 ,  G09G3/3275 ,  G09G3/3233 ,  G09G3/3266

Abstract: Provided are a display device and method of driving the same. A display device includes: a display panel including: intersecting data lines and gate lines, and pixels in a matrix, a timing controller allowing the pixels to be driven at a lower refresh rate in low-speed driving mode than in normal driving mode, and controlling a horizontal blank time to be longer in the low-speed driving mode than the normal driving mode, the horizontal blank time being a period of time during which no data voltage exists, between an nth data voltage and an (n+1)th data voltage consecutively supplied through the data lines, “n” being a positive integer, and a display panel driving circuit writing one frame of image data to the pixels during one frame period in the normal driving mode, and in a distributed manner during a second to fourth frame period in the low-speed driving mode.

公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US09721973B2

公开(公告)日：2017-08-01

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Hoyoung Jung ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

公开(公告)号：US10923036B2

公开(公告)日：2021-02-16

申请号：US15665871

申请日：2017-08-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Youngjang Lee

IPC: G09G3/3266 ,  G09G3/3233 ,  G09G3/3275

Abstract: A display panel and an electroluminescence display using the same are discussed. The display panel includes pixels in which data lines and gate lines are crossed and which are arranged in a matrix form, and a gate driver configured to supply a gate pulse to the gate lines. Each pixel circuit of the pixels includes one or more n-type transistors and two or more p-type transistors. A gate driver of the display panel includes a first gate driving circuit configured to supply a first gate signal to an n-type transistor of the pixel circuit using a plurality of n-type transistors, a second gate driving circuit configured to supply a second gate signal to one of the p-type transistors of the pixel circuit using a plurality of p-type transistors, and a third gate driving circuit configured to supply a third gate signal to the other one of the p-type transistors of the pixel circuit using a plurality of n-type transistors.

公开(公告)号：US10325937B2

公开(公告)日：2019-06-18

申请号：US14628378

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/822

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US09954014B2

公开(公告)日：2018-04-24

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jinchae Jeon ,  Seungchan Choi ,  Junho Lee ,  Youngjang Lee ,  Sungbin Ryu ,  Kitae Kim ,  Bokyoung Cho ,  Jeanhan Yoon ,  Uijin Chung ,  Jihye Lee ,  Eunsung Kim ,  Hyunsoo Shin ,  Kyeongju Moon ,  Hyojin Kim ,  Wonkyung Kim ,  Jeihyun Lee ,  Soyeon Je

IPC: H01L27/12 ,  H01L27/32 ,  H01L49/02 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

公开(公告)号：US09691799B2

公开(公告)日：2017-06-27

申请号：US14629632

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  G02F1/1345 ,  G02F1/1368

CPC classification number: H01L27/1251 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US10985196B2

公开(公告)日：2021-04-20

申请号：US14628444

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Sohyung Lee ,  Hoyoung Jung ,  Moonho Park ,  Sungjin Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

公开(公告)号：US10186528B2

公开(公告)日：2019-01-22

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

公开(公告)号：US10068530B2

公开(公告)日：2018-09-04

申请号：US15283588

申请日：2016-10-03

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Jeanhan Yoon

IPC: G09G3/3266 ,  G11C19/18 ,  G11C19/28 ,  G09G3/3233 ,  G09G3/3275

Abstract: Provided are an organic light-emitting diode (OLED) display and method of driving the same. An OLED display includes: a display panel including a plurality of pixels, each pixel including an OLED, an emission timing of each pixel being controlled in response to an EM signal, a shift register configured to generate an anti-phase EM signal based on gate shift clocks, and an inverter configured to: invert a phase of the anti-phase EM signal based on emission shift clocks, and generate the EM signal, wherein a driving frequency of the shift register and a driving frequency of the inverter are lower in a low-speed driving mode than in a normal driving mode, and wherein in the low-speed driving mode, an amplitude of the emission shift clocks is less than an amplitude of the gate shift clocks.