Invention Grant
- Patent Title: Bidirectional switch
-
Application No.: US14731563Application Date: 2015-06-05
-
Publication No.: US09722061B2Publication Date: 2017-08-01
- Inventor: Samuel Menard , Dalaf Ali
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1457142 20140724
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/747 ; H01L29/06

Abstract:
A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.
Public/Granted literature
- US20160027907A1 BIDIRECTIONAL SWITCH Public/Granted day:2016-01-28
Information query
IPC分类: