- 专利标题： Two-terminal memory set features type mechanisms enhancements
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申请号： US14641878申请日： 2015-03-09
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公开(公告)号： US09734011B1公开(公告)日： 2017-08-15
- 发明人: Hagop Nazarian , Kuk-Hwan Kim
- 申请人： Crossbar, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： CROSSBAR, INC.
- 当前专利权人： CROSSBAR, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Amin, Turocy & Watson, LLP
- 主分类号： G06F11/10
- IPC分类号： G06F11/10 ; G06F3/06 ; G11C29/08 ; G11C29/04
摘要：
Operating characteristics associated with non-volatile two-terminal memory can be modified post-fabrication, e.g., by a controller that controls the non-volatile two-terminal memory. As a result, two-terminal memory arrays included in memory devices (e.g., memory cards, solid-state drives, etc.) can be flexibly modified to provide numerous advantages over other types of non-volatile memory.
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