Invention Grant
- Patent Title: Integrated circuit devices having through-silicon vias and methods of manufacturing such devices
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Application No.: US14873453Application Date: 2015-10-02
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Publication No.: US09735090B2Publication Date: 2017-08-15
- Inventor: Ju-il Choi , Atsushi Fujisaki , Byung-Iyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
- Applicant: Ju-il Choi , Atsushi Fujisaki , Byung-Iyul Park , Ji-soon Park , Joo-hee Jang , Jeong-gi Jin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0134474 20141006
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/00 ; H01L23/532
Abstract:
An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.
Public/Granted literature
- US20160099201A1 INTEGRATED CIRCUIT DEVICES HAVING THROUGH-SILICON VIAS AND METHODS OF MANUFACTURING SUCH DEVICES Public/Granted day:2016-04-07
Information query
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