公开(公告)号：US20130070923A1

公开(公告)日：2013-03-21

申请号：US13607876

申请日：2012-09-10

Applicant: Dong-jin KANG ,  Dave AHN ,  Ji-soon PARK

Inventor： Dong-jin KANG ,  Dave AHN ,  Ji-soon PARK

IPC: H04N7/167

CPC classification number: H04N21/25816 ,  H04N21/2347 ,  H04N21/26613

Abstract: A method for generating a transport stream of a server is provided. The method for generating a transport stream of a server which sends broadcasting content to a client device comprises: scrambling broadcasting content by using a specific key; adding at least one content-encryption message which includes the specific key and a device key for obtaining the specific key from the at least one content-encryption message to the broadcasting content so as to generate a transport stream; and sending the generated transport stream to the client device.

Abstract translation: 提供了一种用于生成服务器的传输流的方法。 用于生成向客户端设备发送广播内容的服务器的传输流的方法包括：通过使用特定密钥对广播内容进行加扰; 将至少一个包含特定密钥的内容加密消息和用于从所述至少一个内容加密消息获得所述特定密钥的设备密钥添加到所述广播内容，以便生成传输流; 并将生成的传输流发送到客户端设备。

公开(公告)号：US20120280391A1

公开(公告)日：2012-11-08

申请号：US13440123

申请日：2012-04-05

Applicant: HEI-SEUNG KIM ,  GIL-HEYUN CHOI ,  JI-SOON PARK ,  JONG-MYEONG LEE

Inventor： HEI-SEUNG KIM ,  GIL-HEYUN CHOI ,  JI-SOON PARK ,  JONG-MYEONG LEE

IPC: H01L27/10 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L27/11524 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/528 ,  H01L27/11536 ,  H01L27/11539 ,  H01L27/11541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A conductive pattern structure includes a first insulating interlayer on a substrate, metal wiring on the first insulating interlayer, a second insulating interlayer on the metal wiring, and first and second metal contacts extending through the second insulating interlayer. The first metal contacts contact the metal wiring in a cell region and the second metal contact contacts the metal wiring in a peripheral region. A third insulating interlayer is disposed on the second insulating interlayer. Conductive segments extend through the third insulating interlayer in the cell region and contact the first metal contacts. Another conductive segment extends through the third insulating interlayer in the peripheral region and contacts the second metal contact. The structure facilitates the forming of uniformly thick wiring in the cell region using an electroplating process.

Abstract translation: 导电图案结构包括在基板上的第一绝缘中间层，第一绝缘中间层上的金属布线，金属布线上的第二绝缘中间层以及延伸穿过第二绝缘夹层的第一和第二金属触点。 第一金属触点与单元区域中的金属布线接触，并且第二金属触点与外围区域中的金属布线接触。 第三绝缘中间层设置在第二绝缘中间层上。 导电部分延伸通过电池区域中的第三绝缘中间层并与第一金属触点接触。 另一个导电段延伸穿过周边区域中的第三绝缘中间层并接触第二金属接触。 该结构有助于使用电镀工艺在电池区域中形成均匀厚的布线。

公开(公告)号：US20120120728A1

公开(公告)日：2012-05-17

申请号：US13191581

申请日：2011-07-27

Applicant: Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

Inventor： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

IPC: G11C11/34 ,  H01L21/336 ,  H01L29/788

CPC classification number: H01L29/7926 ,  G11C5/063 ,  G11C16/0483 ,  H01L27/11582

Abstract: A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

Abstract translation: 提供了一种非易失性存储器件，包括由单晶半导体形成的衬底，垂直于衬底延伸的柱状半导体图案，多个栅电极和与衬底垂直交替堆叠的多个层间电介质层，以及 形成在所述多个栅极电极和所述多个层间电介质层之间的电荷扩展阻挡层。

公开(公告)号：US08155311B2

公开(公告)日：2012-04-10

申请号：US11952174

申请日：2007-12-07

Applicant: Jun-bum Shin ,  Ji-soon Park

Inventor： Jun-bum Shin ,  Ji-soon Park

IPC: H04L9/00

CPC classification number: H04L9/0643 ,  H04L9/0637 ,  H04L9/3236 ,  H04L2209/38

Abstract: A method of encrypting a message for message integrity is provided. In the method, a random number is generated, a first ciphertext is generated by encrypting the message by using the generated random number, a hash value of the first ciphertext is calculated, an encryption key is generated by using the hash value of the first ciphertext and a shared key, a second ciphertext is generated by encrypting the random number by using the encryption key, and the first and second ciphertexts are combined.

Abstract translation: 提供了一种加密消息的消息完整性的方法。 在该方法中，生成随机数，通过使用生成的随机数对消息进行加密来生成第一密文，计算第一密文的散列值，通过使用第一密文的散列值生成加密密钥 和共享密钥，通过使用加密密钥加密随机数来生成第二密文，并且组合第一和第二密文。

公开(公告)号：US20100106771A1

公开(公告)日：2010-04-29

申请号：US12472417

申请日：2009-05-27

Applicant: Hee-jae PARK ,  Jun-bum SHIN ,  Ji-soon PARK

Inventor： Hee-jae PARK ,  Jun-bum SHIN ,  Ji-soon PARK

IPC: G06F15/16

CPC classification number: G06F15/16 ,  H04L63/0846

Abstract: Provided are a method and an apparatus for communication based on certification using a static identifier and an updatable dynamic identifier allowing a verified client to access a server.

Abstract translation: 提供了一种基于使用静态标识符的认证和允许经验证的客户端访问服务器的可更新动态标识符进行通信的方法和装置。

公开(公告)号：US20080279385A1

公开(公告)日：2008-11-13

申请号：US11952306

申请日：2007-12-07

Applicant: Ji-soon Park ,  Jun-bum Shin

Inventor： Ji-soon Park ,  Jun-bum Shin

IPC: H04L9/08

CPC classification number: G06Q20/1235 ,  G06Q20/32 ,  G06Q20/341 ,  G06Q20/40975 ,  G07F7/1008 ,  G07F7/1016 ,  H04L9/0822 ,  H04L9/0877 ,  H04L9/0897 ,  H04L2209/60 ,  H04L2209/805

Abstract: Provided are a method and host device for using content using a mobile card, and a mobile card. The method includes storing an identifier (ID) of the mobile card, a global key, and a content key encrypted by a secret key of the mobile card, generating a combined key of the ID and the global key, generating a first cryptogram, in which the content key encrypted by the secret key is encrypted by the combined key, transmitting the first cryptogram to the mobile card, receiving from the mobile card a second cryptogram, in which the content key is encrypted by the combined key, and decrypting the second cryptogram. Accordingly, a user can use encrypted content from a remote place.

Abstract translation: 提供了使用移动卡和移动卡来使用内容的方法和主机设备。 该方法包括存储移动卡的标识符（ID），全局密钥和由移动卡的秘密密钥加密的内容密钥，生成ID和全局密钥的组合密钥，生成第一密码 由密钥加密的内容密钥由组合密钥加密，将第一密码传送到移动卡，从移动卡接收第二密码，其中内容密钥由组合密钥加密，并且解密第二密码 密码 因此，用户可以使用来自偏远地方的加密内容。

公开(公告)号：US20060281289A1

公开(公告)日：2006-12-14

申请号：US11446981

申请日：2006-06-06

Applicant: Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

Inventor： Young-Cheon Kim ,  Chul Hwangbo ,  Rak-Hwan Kim ,  Hyeon-Deok Lee ,  In-Sun Park ,  Ji-Soon Park

IPC: H01L21/4763

CPC classification number: H01L21/26513 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833

Abstract: In a method of forming a polycide layer and method of manufacturing a semiconductor device having the polycide layer, the method may include forming a preliminary polysilicon layer doped with first type impurities on a substrate having a first region and a second region, implanting second type of impurities into a portion of the preliminary polysilicon layer on the second region, heat treating the preliminary polysilicon layer to electrically activate the impurities, removing a portion of an upper surface of the heat treated preliminary polysilicon layer to obtain a polysilicon layer, forming a metal silicide layer on the polysilicon layer, and patterning the polysilicon layer and the metal silicide layer to form a first type gate electrode on the first region and to form a second type gate electrode on the second region.

Abstract translation: 在形成多晶硅化合物层的方法和制造具有多晶硅化物层的半导体器件的方法中，该方法可以包括在具有第一区域和第二区域的衬底上形成掺杂有第一类型杂质的初步多晶硅层， 杂质进入第二区域的初步多晶硅层的一部分，热处理初步多晶硅层以电激活杂质，去除热处理的初步多晶硅层的上表面的一部分以获得多晶硅层，形成金属硅化物 并且在所述第一区域上形成所述多晶硅层和所述金属硅化物层以形成第一类型的栅电极，并在所述第二区域上形成第二类型的栅电极。

公开(公告)号：US06797618B2

公开(公告)日：2004-09-28

申请号：US10630570

申请日：2003-07-29

Applicant: Eung-Joon Lee ,  In-Sun Park ,  Ji-Soon Park

Inventor： Eung-Joon Lee ,  In-Sun Park ,  Ji-Soon Park

IPC: H01L2144

CPC classification number: H01L21/0206 ,  H01L21/02063 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/665 ,  Y10S438/906 ,  Y10S438/963

Abstract: A conductive pattern having a surface including silicon is formed on a substrate of a semiconductor device and a conduction region having a surface including silicon is formed in the substrate. A radio frequency etching process is performed ex-situ to remove impurities from a resultant structure and to improve surface characteristics of the conduction region. Residues generated during the radio frequency etching process are removed from the conductive pattern and the conduction region by a cleaning process. A metal film is formed on the conductive pattern and the conduction region. A silicide film is formed on the conductive pattern and the conduction region by reacting metal of the metal film and silicon in the conductive pattern and the conduction region. With a radio frequency sputtering process and a wet cleaning process, a metal silicide film having a uniform phase may be stably formed.

Abstract translation: 在半导体器件的衬底上形成具有包括硅的表面的导电图案，并且在衬底中形成具有包括硅的表面的导电区域。 非原位地进行射频蚀刻处理以从所得结构中去除杂质并改善导电区域的表面特性。 在射频蚀刻工艺中产生的残留物通过清洁处理从导电图案和导电区域中去除。 在导电图案和导电区域上形成金属膜。 通过金属膜的金属和导电图案中的硅和导电区域之间的反应，在导电图案和导电区域上形成硅化物膜。 通过射频溅射法和湿式清洗法，可以稳定地形成具有均匀相的金属硅化物膜。

公开(公告)号：US5982039A

公开(公告)日：1999-11-09

申请号：US48391

申请日：1998-03-26

Applicant: Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

Inventor： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

IPC: H01L23/522 ,  H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.

Abstract translation: 公开了一种用于形成完全埋入的接触孔的方法和在互连结构中具有完全埋入的接触孔的半导体器件。 完全埋入的接触孔包括具有形成在其中的接触孔的第一导热性的第一绝缘层。 形成在与接触孔的位置相邻的第一绝缘层中的第二导热材料的区域。 第二热导率大于第一热导率，使得材料区域的热导率大于绝缘层的热导率。 在孔中形成金属，完全埋入接触孔。 该方法包括在绝缘体中邻近形成绝缘层的导热系数较高的材料区域，在接触孔中沉积金属并加热金属，绝缘层和导热系数较高的材料区域 将金属流入接触孔，以完全埋入接触孔。

公开(公告)号：US09735090B2

公开(公告)日：2017-08-15

申请号：US14873453

申请日：2015-10-02

Applicant: Ju-il Choi ,  Atsushi Fujisaki ,  Byung-Iyul Park ,  Ji-soon Park ,  Joo-hee Jang ,  Jeong-gi Jin

Inventor： Ju-il Choi ,  Atsushi Fujisaki ,  Byung-Iyul Park ,  Ji-soon Park ,  Joo-hee Jang ,  Jeong-gi Jin

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3135 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L24/00 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05557 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/11825 ,  H01L2224/11906 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13552 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01015 ,  H01L2924/014 ,  H01L2924/01074

Abstract: An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.