Invention Grant
- Patent Title: Forming memory using doped oxide
-
Application No.: US14571540Application Date: 2014-12-16
-
Publication No.: US09741569B2Publication Date: 2017-08-22
- Inventor: Chih-Wei Hu , Teng-Hao Yeh
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent Yiding Wu
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38 ; H01L21/225 ; H01L27/11578
Abstract:
A method is provided for manufacturing a memory device. A strip of semiconductor material is formed having a memory region, a contact landing area region and a switch region between the memory region and the contact landing area region. A memory layer is formed on surfaces of the strip in the memory region. A plurality of memory cell gates is formed over the memory region of the strip. A switch gate is formed over the switch region of the strip. A doped insulating material is deposited over a portion of the strip between the contact landing area region and the memory region. Diffusion of dopant is caused from the doped insulating material into the strip in the portion of the strip.
Public/Granted literature
- US20160172369A1 FORMING MEMORY USING DOPED OXIDE Public/Granted day:2016-06-16
Information query
IPC分类:
