Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US14846736Application Date: 2015-09-05
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Publication No.: US09741579B2Publication Date: 2017-08-22
- Inventor: Nanako Tamari , Michikazu Morimoto , Naoki Yasui
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2015-037624 20150227
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01J37/32
Abstract:
A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.
Public/Granted literature
- US20160254163A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2016-09-01
Information query
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