- Patent Title: Method for producing self-aligned line end vias and related device
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Application No.: US15175308Application Date: 2016-06-07
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Publication No.: US09741613B1Publication Date: 2017-08-22
- Inventor: John H. Zhang , Carl J. Radens , Lawrence A. Clevenger
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
A method for producing self-aligned line end vias and the resulting device are provided. Embodiments include forming trenches in a dielectric layer; filling the trenches with a sacrificial layer; forming and etching a block mask over sacrificial layers to form a cut area over a portion of the trenches; forming spacers at sides of the cut area; removing the sacrificial layer from the portion of the trenches; forming a mask in the cut area and the portion of trenches, the mask selected from a HDP oxide, SiC or SiCNH; selectively etching the spacers; and selectively etching the sacrificial layer and the dielectric layer by RIE to form SAVs.
Information query
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