Method of forming self-aligned metal lines and vias

    公开(公告)号:US09607893B1

    公开(公告)日:2017-03-28

    申请号:US15202949

    申请日:2016-07-06

    Abstract: Disclosed are embodiments of a method, wherein metal lines and vias of an integrated circuit IC) metal level of are formed without requiring separate cut masks to pattern the trenches for the metal lines and the via holes for the vias. Trenches are formed in an upper portion of a dielectric layer. Each trench is filled with a sacrificial material. A mask is formed above the dielectric layer and patterned with one or more openings, each opening exposing one or more segments of the sacrificial material in one or more of the trenches, respectively. A sidewall spacer is formed in each opening and a selective etch process is performed to form one or more via holes that extend through the sacrificial material and through the lower portion of the dielectric layer below. Subsequently, all the sacrificial material is removed and metal is deposited, thereby forming self-aligned metal lines and via(s).

    Methods of forming vertical transistor devices with self-aligned replacement gate structures
    3.
    发明授权
    Methods of forming vertical transistor devices with self-aligned replacement gate structures 有权
    形成具有自对准替代栅极结构的垂直晶体管器件的方法

    公开(公告)号:US09530863B1

    公开(公告)日:2016-12-27

    申请号:US15097574

    申请日:2016-04-13

    CPC classification number: H01L29/66545 H01L29/0847 H01L29/66666 H01L29/7827

    Abstract: One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a bottom spacer material around the vertically oriented channel semiconductor structure and forming a sacrificial material layer above the layer of a bottom spacer material. In this example, the method further includes forming a sidewall spacer adjacent the vertically oriented channel semiconductor structure and above an upper surface of the sacrificial material layer, removing the sacrificial material layer so as to define a replacement gate cavity between a bottom surface of the sidewall spacer and the layer of a bottom spacer material, and forming a replacement gate structure in the replacement gate cavity.

    Abstract translation: 本文中公开的一种说明性方法包括形成垂直取向的沟道半导体结构,在垂直取向的沟道半导体结构周围形成底部间隔物材料的层,并在底部间隔物材料的层的上方形成牺牲材料层。 在该示例中,该方法还包括形成邻近垂直取向的沟道半导体结构并且在牺牲材料层的上表面上方的侧壁间隔物,去除牺牲材料层,以便在侧壁的底表面之间限定替换栅腔 间隔物和底部间隔物材料的层,并且在替换浇口腔中形成替代浇口结构。

    Contact structures
    4.
    发明授权

    公开(公告)号:US10510613B2

    公开(公告)日:2019-12-17

    申请号:US15878081

    申请日:2018-01-23

    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a contact over an active gate structure and methods of manufacture. The structure includes: an active gate structure composed of conductive material located between sidewall material; an upper sidewall material above the sidewall material, the upper sidewall material being different material than the sidewall material; and a contact structure in electrical contact with the conductive material of the active gate structure. The contact structure is located between the sidewall material and between the upper sidewall material.

    METHODS OF SIMULTANEOUSLY FORMING BOTTOM AND TOP SPACERS ON A VERTICAL TRANSISTOR DEVICE

    公开(公告)号:US20180114850A1

    公开(公告)日:2018-04-26

    申请号:US15840835

    申请日:2017-12-13

    Inventor: John H. Zhang

    Abstract: A vertical transistor device includes a vertically oriented channel semiconductor structure, a bottom source/drain (S/D) region, a top source/drain (S/D) region, and a gate structure positioned around the vertically oriented channel semiconductor structure, above the bottom source/drain (S/D) region, and below the top source/drain (S/D) region. The gate structure includes a gate electrode and a gate insulation layer positioned between the gate electrode and at least a portion of the vertically oriented channel semiconductor structure. A top spacer is positioned between the gate electrode and at least a portion of the top source/drain (S/D) region, a bottom spacer is positioned between the gate electrode and at least a portion of the bottom source/drain (S/D) region, and a gate cap is positioned around an outer perimeter surface of the gate structure, wherein the top spacer, the bottom spacer, and the gate cap all include a same insulating material.

    Self-aligned gate-first VFETs using a gate spacer recess
    7.
    发明授权
    Self-aligned gate-first VFETs using a gate spacer recess 有权
    使用栅极间隔凹槽的自对准栅极 - 第一VFET

    公开(公告)号:US09536793B1

    公开(公告)日:2017-01-03

    申请号:US15135917

    申请日:2016-04-22

    Abstract: Methods for self-aligned gate-first VFETs using gate-spacer recess and the resulting devices are disclosed. Embodiments include providing a substrate including adjacent transistor regions; forming adjacent and spaced fin-structures each including hardmask over a fin and over a different transistor region; forming a gate-dielectric and metal-spacer consecutively on each side of each fin-structure; forming a liner on all exposed surfaces of the hardmask, gate-dielectrics, and metal-spacers and the substrate; forming an ILD filling spaces between the fin-structures and coplanar with an upper surface of the liner; removing the liner over the fin-structures; removing the hardmask and recessing the liner, the gate-dielectrics and metal-spacers of each fin-structure creating cavities in the ILD; forming a low-k spacer on sidewalls of and over the metal-spacers and liners in each cavity; forming a top S/D structure over the gate-dielectric and fin in each cavity; and forming a top S/D contact over each top S/D structure.

    Abstract translation: 公开了使用栅极 - 间隔物凹槽的自对准栅极 - 第一VFET和所得到的器件的方法。 实施例包括提供包括相邻晶体管区域的衬底; 形成相邻和间隔的翅片结构,每个翅片结构包括翅片上的硬掩模和不同的晶体管区域上的硬掩模; 在每个翅片结构的每一侧上连续形成栅电介质和金属间隔物; 在硬掩模,栅极 - 电介质和金属间隔物和基底的所有暴露表面上形成衬垫; 在翅片结构之间形成ILD填充空间并与衬套的上表面共面; 将衬垫移出翅片结构; 去除硬掩模并使衬垫凹陷,每个鳍结构的栅电介质和金属间隔件在ILD中产生空腔; 在每个腔中的金属间隔件和衬垫的侧壁上形成低k间隔物; 在每个腔中的栅电介质和鳍上形成顶部S / D结构; 并且在每个顶部S / D结构上形成顶部S / D接触。

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