Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15181621Application Date: 2016-06-14
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Publication No.: US09741867B2Publication Date: 2017-08-22
- Inventor: Kiyoshi Kato , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-265594 20091120
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H04M1/00 ; H01L29/786 ; H01L27/06 ; H01L27/12 ; H04B1/40 ; G06K19/077 ; H01L29/10 ; H01L23/66

Abstract:
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.
Public/Granted literature
- US20160293775A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-06
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