Invention Grant
- Patent Title: Low-leak potential selection circuit
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Application No.: US15078013Application Date: 2016-03-23
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Publication No.: US09742401B2Publication Date: 2017-08-22
- Inventor: Shogo Kawahara , Tomohiro Nezuka
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2015-121062 20150616
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/693 ; H03M1/00

Abstract:
First and second p-type transistors are connected in series between an output terminal and a positive power terminal. First and second n-type transistors are connected in series between a node and a negative power terminal. A third p-type transistor is connected between a node and the positive power terminal. Third and fourth n-type transistors are connected in series between the output terminal and a low potential terminal. Fourth and fifth p-type transistors are connected in series between a node and the negative power terminal. A fifth n-type transistor is connected between a node and the negative power terminal. A high potential is outputted without leak current when the first to fifth p-type transistors are turned on and the first to fifth n-type transistors are turned off.
Public/Granted literature
- US20160373107A1 LOW-LEAK POTENTIAL SELECTION CIRCUIT Public/Granted day:2016-12-22
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