Invention Grant
- Patent Title: Semiconductor photodetector
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Application No.: US14740113Application Date: 2015-06-15
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Publication No.: US09743026B2Publication Date: 2017-08-22
- Inventor: Manabu Usuda , Yutaka Hirose , Yoshihisa Kato , Nobukazu Teranishi
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-275383 20121218; JP2013-051330 20130314
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378 ; H04N5/369 ; H04N5/3745 ; G01J1/44 ; H01L31/107 ; H04N5/357 ; H04N5/361

Abstract:
A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.
Public/Granted literature
- US20150281620A1 SEMICONDUCTOR PHOTODETECTOR Public/Granted day:2015-10-01
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