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公开(公告)号:US09554067B2
公开(公告)日:2017-01-24
申请号:US14723498
申请日:2015-05-28
Inventor: Keisuke Yazawa , Motonori Ishii , Yutaka Hirose , Yoshihisa Kato , Yoshiyuki Matsunaga
IPC: H04N5/363 , H04N5/374 , H04N5/378 , H04N5/3745 , H01L27/30
CPC classification number: H04N5/363 , H01L27/307 , H04N5/374 , H04N5/3741 , H04N5/3745 , H04N5/378
Abstract: The present invention provides a solid-state imaging apparatus that can significantly reduce kTC noise by using a negative feedback amplifying circuit. A solid-state imaging apparatus includes a pixel unit including a plurality of pixels arranged on a semiconductor substrate in a matrix, the pixel unit including, for each column, a source line and a column signal line, each of the plurality of pixels including: a photoelectric conversion unit that generates a signal charge corresponding to incident light; a storage unit storing the signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit. With this configuration, kTC noise can significantly be reduced.
Abstract translation: 本发明提供一种可以通过使用负反馈放大电路来显着降低kTC噪声的固态成像装置。 一种固态成像装置,包括:像素单元,包括以矩阵形式布置在半导体衬底上的多个像素,所述像素单元包括:对于每一列,源极线和列信号线,所述多个像素包括: 光电转换单元,其生成与入射光对应的信号电荷; 存储单元,存储所述信号电荷; 复位晶体管; 放大晶体管; 和截止晶体管,其中放大晶体管和截止晶体管形成负反馈放大电路。 通过这种配置,可以显着降低kTC噪声。
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公开(公告)号:US09871983B2
公开(公告)日:2018-01-16
申请号:US15377613
申请日:2016-12-13
Inventor: Keisuke Yazawa , Motonori Ishii , Yutaka Hirose , Yoshihisa Kato , Yoshiyuki Matsunaga
IPC: H04N5/363 , H04N5/374 , H04N5/3745 , H04N5/378 , H01L27/30
CPC classification number: H04N5/363 , H01L27/307 , H04N5/374 , H04N5/3741 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.
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公开(公告)号:US09743026B2
公开(公告)日:2017-08-22
申请号:US14740113
申请日:2015-06-15
Inventor: Manabu Usuda , Yutaka Hirose , Yoshihisa Kato , Nobukazu Teranishi
IPC: H01L27/146 , H04N5/378 , H04N5/369 , H04N5/3745 , G01J1/44 , H01L31/107 , H04N5/357 , H04N5/361
CPC classification number: H04N5/378 , G01J1/44 , H01L27/14609 , H01L27/14612 , H01L27/14623 , H01L27/14634 , H01L27/14665 , H01L31/107 , H01L2924/381 , H04N5/357 , H04N5/361 , H04N5/369 , H04N5/37455
Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.
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公开(公告)号:US10192920B2
公开(公告)日:2019-01-29
申请号:US15913106
申请日:2018-03-06
Inventor: Yusuke Sakata , Manabu Usuda , Mitsuyoshi Mori , Yoshihisa Kato
IPC: H01L31/107 , H01L27/146 , H01L31/00 , H04N5/369 , H04N5/374 , H04N5/378
Abstract: A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.
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公开(公告)号:US10256572B2
公开(公告)日:2019-04-09
申请号:US15711173
申请日:2017-09-21
Inventor: Yutaka Hirose , Yoshihisa Kato , Hiroyuki Mori , Taichi Sato , Yoshihide Sawada , Tsuyoshi Tanaka
IPC: H01R13/64 , G02B21/34 , F16M11/04 , F16M11/10 , H01R13/639 , H01R13/73 , H04N1/031 , H04N5/372 , B01L9/00 , H04N5/225 , H01L27/146 , H01L27/148 , G02B21/00
Abstract: A socket includes a first base member that includes a module mount unit allowing a module including an imaging device and an object to be placed thereon and an electric connector that electrically connects the imaging device to an external apparatus, a second base member having an opening, and an engagement unit that causes the first base member to be engaged with the second base member under a condition that the module placed on the module mount unit is sandwiched by the first and second base members. When the first base member is engaged with the second base member by the engagement unit under a condition that the module placed on the module mount unit is sandwiched by the first base member and the second base member, the electric connector is electrically connected to the imaging device, and the object receives illumination light from a light source through the opening.
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6.
公开(公告)号:US10133047B2
公开(公告)日:2018-11-20
申请号:US14682099
申请日:2015-04-09
Inventor: Hideto Motomura , Yasuhiko Adachi , Yoshihisa Kato
Abstract: An image forming apparatus includes an imager that is electrically connected to an image sensor disposed at a position where light that has passed through a sample slice is incident on the image sensor, and an illumination system that emits illumination light successively in different illumination directions relative to a sample slice to illuminate the sample slice with the illumination light and that emits a first light having a peak in a first wavelength range and a second light having a peak in a second wavelength range. The image forming apparatus obtains a plurality of first-color images with the image sensor while the sample slice is being illuminated with the first light serving as the illumination light successively in the different illumination directions. The image forming apparatus obtains at least one second-color image with the image sensor while the sample slice is being illuminated with the second light in at least one of the different illumination directions. The image forming apparatus generates a high-resolution image on the basis of the plurality of first-color images and the at least one second-color image.
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公开(公告)号:US09778449B2
公开(公告)日:2017-10-03
申请号:US14741708
申请日:2015-06-17
Inventor: Hideto Motomura , Yoshihisa Kato , Tsuyoshi Tanaka , Tokuhiko Tamaki
CPC classification number: G02B21/06 , G02B21/362
Abstract: A preparation element set including an image sensor including a sensor surface, a sensor back surface, and a board; a package including a front surface, a back surface, and terminals on the back surface, the front surface touching or facing the sensor back surface; and a transparent plate facing the sensor surface with a subject placed therebetween, wherein the board includes a board surface and a board back surface, a distance between the board surface and the sensor surface is less than a distance between the board back surface and the sensor surface, a distance between the board surface and the sensor back surface is more than a distance between the board back surface and the sensor back surface, conductive holes pierce the board from the board surface to the board back surface, and conductors on the board surface are electrically connected to terminals by using the conductive holes.
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公开(公告)号:US10923614B2
公开(公告)日:2021-02-16
申请号:US15328648
申请日:2015-07-09
Inventor: Yusuke Sakata , Manabu Usuda , Mitsuyoshi Mori , Yutaka Hirose , Yoshihisa Kato
IPC: H01L31/107 , H01L27/146 , H02S40/44
Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.
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公开(公告)号:US10812729B2
公开(公告)日:2020-10-20
申请号:US15461159
申请日:2017-03-16
Inventor: Shigetaka Kasuga , Seiji Yamahira , Yoshihisa Kato
IPC: H04N5/235 , H04N5/374 , H04N5/3745 , H04N5/378 , G01J1/44 , H01L31/107
Abstract: A solid-state imaging device includes a detector, a count value storage, and a reader. The detector includes an avalanche amplification type light receiving element that detects a photon, and a resetter that resets an output potential of the light receiving element, and outputs a digital signal that indicates the presence or absence of incidence of a photon on the light receiving element. The count value storage performs counting by converting the digital signal output from the detector to an analog voltage, and stores the result of counting as a count value. The reader outputs an analog signal indicating the count value.
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10.
公开(公告)号:US09799992B2
公开(公告)日:2017-10-24
申请号:US14823659
申请日:2015-08-11
Inventor: Yutaka Hirose , Yoshihisa Kato , Hiroyuki Mori , Taichi Sato , Yoshihide Sawada , Tsuyoshi Tanaka
IPC: G01N1/30 , H01R13/64 , G02B21/34 , F16M11/04 , F16M11/10 , H01R13/639 , H01R13/73 , H04N1/031 , H04N5/372 , B01L9/00 , H04N5/225 , H01L27/146 , H01L27/148 , G02B21/00
CPC classification number: H01R13/64 , B01L9/52 , B01L2300/0645 , B01L2300/0654 , B01L2300/0822 , F16M11/046 , F16M11/10 , G02B21/0008 , G02B21/34 , H01L27/14623 , H01L27/14818 , H01R13/639 , H01R13/73 , H04N1/0315 , H04N1/0318 , H04N5/2257 , H04N5/372
Abstract: A socket includes a first base member that includes a module mount unit allowing a module including an imaging device and an object to be placed thereon and an electric connector that electrically connects the imaging device to an external apparatus, a second base member having an opening, and an engagement unit that causes the first base member to be engaged with the second base member under a condition that the module placed on the module mount unit is sandwiched by the first and second base members. When the first base member is engaged with the second base member by the engagement unit under a condition that the module placed on the module mount unit is sandwiched by the first base member and the second base member, the electric connector is electrically connected to the imaging device, and the object receives illumination light from a light source through the opening.
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