Solid-state imaging apparatus
    1.
    发明授权
    Solid-state imaging apparatus 有权
    固态成像装置

    公开(公告)号:US09554067B2

    公开(公告)日:2017-01-24

    申请号:US14723498

    申请日:2015-05-28

    Abstract: The present invention provides a solid-state imaging apparatus that can significantly reduce kTC noise by using a negative feedback amplifying circuit. A solid-state imaging apparatus includes a pixel unit including a plurality of pixels arranged on a semiconductor substrate in a matrix, the pixel unit including, for each column, a source line and a column signal line, each of the plurality of pixels including: a photoelectric conversion unit that generates a signal charge corresponding to incident light; a storage unit storing the signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit. With this configuration, kTC noise can significantly be reduced.

    Abstract translation: 本发明提供一种可以通过使用负反馈放大电路来显着降低kTC噪声的固态成像装置。 一种固态成像装置,包括:像素单元,包括以矩阵形式布置在半导体衬底上的多个像素,所述像素单元包括:对于每一列,源极线和列信号线,所述多个像素包括: 光电转换单元,其生成与入射光对应的信号电荷; 存储单元,存储所述信号电荷; 复位晶体管; 放大晶体管; 和截止晶体管,其中放大晶体管和截止晶体管形成负反馈放大电路。 通过这种配置,可以显着降低kTC噪声。

    Solid-state imaging device
    4.
    发明授权

    公开(公告)号:US10192920B2

    公开(公告)日:2019-01-29

    申请号:US15913106

    申请日:2018-03-06

    Abstract: A solid-state imaging device includes a substrate of P type and a wiring layer. The substrate includes: a first semiconductor region disposed on a first principle surface and extending in a direction from the first principal surface toward the second principal surface; a second semiconductor region disposed between the second principal surface and the first semiconductor region and connected to the first semiconductor region; a P type semiconductor region disposed between the second principal surface and the second semiconductor regions of two pixels; and a pixel isolation region disposed inside the substrate, between the first semiconductor regions of the two pixels. The second semiconductor region and the P type semiconductor region form an avalanche multiplication region.

    Image forming apparatus, image forming method, image forming system, and recording medium

    公开(公告)号:US10133047B2

    公开(公告)日:2018-11-20

    申请号:US14682099

    申请日:2015-04-09

    Abstract: An image forming apparatus includes an imager that is electrically connected to an image sensor disposed at a position where light that has passed through a sample slice is incident on the image sensor, and an illumination system that emits illumination light successively in different illumination directions relative to a sample slice to illuminate the sample slice with the illumination light and that emits a first light having a peak in a first wavelength range and a second light having a peak in a second wavelength range. The image forming apparatus obtains a plurality of first-color images with the image sensor while the sample slice is being illuminated with the first light serving as the illumination light successively in the different illumination directions. The image forming apparatus obtains at least one second-color image with the image sensor while the sample slice is being illuminated with the second light in at least one of the different illumination directions. The image forming apparatus generates a high-resolution image on the basis of the plurality of first-color images and the at least one second-color image.

    Photodiode, photodiode array, and solid-state imaging device

    公开(公告)号:US10923614B2

    公开(公告)日:2021-02-16

    申请号:US15328648

    申请日:2015-07-09

    Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.

    Solid-state imaging device
    9.
    发明授权

    公开(公告)号:US10812729B2

    公开(公告)日:2020-10-20

    申请号:US15461159

    申请日:2017-03-16

    Abstract: A solid-state imaging device includes a detector, a count value storage, and a reader. The detector includes an avalanche amplification type light receiving element that detects a photon, and a resetter that resets an output potential of the light receiving element, and outputs a digital signal that indicates the presence or absence of incidence of a photon on the light receiving element. The count value storage performs counting by converting the digital signal output from the detector to an analog voltage, and stores the result of counting as a count value. The reader outputs an analog signal indicating the count value.

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