- Patent Title: Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure
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Application No.: US13095122Application Date: 2011-04-27
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Publication No.: US09748094B2Publication Date: 2017-08-29
- Inventor: Jun-hee Choi , Un-jeong Kim , Sang-jin Lee
- Applicant: Jun-hee Choi , Un-jeong Kim , Sang-jin Lee
- Applicant Address: KR Suwon
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2010-0086586 20100903
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L21/02 ; H01L33/24 ; H01L29/16

Abstract:
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
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