发明授权
- 专利标题: Semiconductor devices with varying threshold voltage and fabrication methods thereof
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申请号: US15055826申请日: 2016-02-29
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公开(公告)号: US09748145B1公开(公告)日: 2017-08-29
- 发明人: Balaji Kannan , Unoh Kwon , Siddarth Krishnan , Takashi Ando , Vijay Narayanan
- 申请人: GLOBALFOUNDRIES INC.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人: GLOBALFOUNDRIES INC.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/324 ; H01L21/225 ; H01L29/66 ; H01L27/092
摘要:
Semiconductor device fabrication methods are provided which include: providing a structure with at least one region and including a dielectric layer disposed over a substrate; forming a multilayer stack structure including a threshold-voltage adjusting layer over the dielectric layer, the multilayer stack structure including a first threshold-voltage adjusting layer in a first region of the at least one region, and a second threshold-voltage adjusting layer in a second region of the at least one region; and annealing the structure to define a varying threshold voltage of the at least one region, the annealing facilitating diffusion of at least one threshold voltage adjusting species from the first threshold-voltage adjusting layer and the second threshold-voltage adjusting layer into the dielectric layer, where a threshold voltage of the first region is independent of the threshold voltage of the second region.
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