Invention Grant
- Patent Title: Semiconductor device having contact plugs and method of forming the same
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Application No.: US15049721Application Date: 2016-02-22
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Publication No.: US09748243B2Publication Date: 2017-08-29
- Inventor: Changseop Yoon , Sungmin Kim , Chiwon Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0056096 20150421
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/092 ; H01L27/088 ; H01L29/66 ; H01L29/06 ; H01L23/485 ; H01L29/165
Abstract:
A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.
Public/Granted literature
- US20160315086A1 SEMICONDUCTOR DEVICE HAVING CONTACT PLUGS AND METHOD OF FORMING THE SAME Public/Granted day:2016-10-27
Information query
IPC分类:
