Invention Grant
- Patent Title: Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror
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Application No.: US15101406Application Date: 2014-11-17
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Publication No.: US09753218B2Publication Date: 2017-09-05
- Inventor: Jochen Kraft , Joerg Siegert , Ewald Stueckler
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP13195512 20131203
- International Application: PCT/EP2014/074786 WO 20141117
- International Announcement: WO2015/082203 WO 20150611
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/122 ; G02B6/42 ; G02B6/132 ; G02B6/43 ; G02B6/136
Abstract:
The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.
Public/Granted literature
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