- 专利标题： Sensor, lithographic apparatus and device manufacturing method
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申请号： US14397126申请日： 2013-03-19
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公开(公告)号： US09753382B2公开(公告)日： 2017-09-05
- 发明人: Thibault Simon Mathieu Laurent , Johannes Henricus Wilhelmus Jacobs , Haico Victor Kok , Yuri Johannes Gabriël Van De Vijver , Johannes Antonius Maria Van De Wal , Bastiaan Andreas Wilhelmus Hubertus Knarren , Robbert Jan Voogd , Jan Steven Christiaan Westerlaken , Johannes Hubertus Antonius Van De Rijdt , Allard Eelco Kooiker , Wilhelmina Margareta Jozef Hurkens-Mertens , Yohann Bruno Yvon Teillet
- 申请人： ASML Netherlands B.V.
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 国际申请： PCT/EP2013/055701 WO 20130319
- 国际公布： WO2013/174539 WO 20131128
- 主分类号： G03B27/58
- IPC分类号： G03B27/58 ; G03B27/74 ; G03F7/20
摘要：
A sensor for use in lithographic apparatus of an immersion type and which, in use, comes into contact with the immersion liquid is arranged so that the thermal resistance of a first heat path from a transducer of the sensor to a temperature conditioning device is less than the thermal resistance of a second heat flow path from the transducer to the immersion liquid. Thus, heat flow is preferentially towards the temperature conditioning device and not the immersion liquid so that temperature-induced disturbance in the immersion liquid is reduced or minimized.
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