A method of programming a memory includes boosting a channel voltage while a first portion of a plurality of increasing programming pulses is applied to a selected access line, and when a criteria is met, reducing the channel voltage to a reduced voltage level and subsequently boosting the channel voltage, starting from the reduced voltage level, while a second portion of the plurality of increasing programming pulses is applied to the selected access line. Differences between the channel voltage boosted while the first portion of the plurality of increasing programming pulses is applied and voltages of the first portion of the plurality of increasing programming pulses are substantially the same as differences between the channel voltage boosted while the second portion of the plurality of increasing programming pulses is applied and voltages of the second portion of the plurality of increasing programming pulses.