Invention Grant
- Patent Title: Thin film transistor and method of manufacturing the same
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Application No.: US15370445Application Date: 2016-12-06
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Publication No.: US09754977B2Publication Date: 2017-09-05
- Inventor: Dong Gun Oh , Young Gu Kang , Sung In Ro , Jae Hak Lee , Sung Hoon Lim , Woong Ki Jeon
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0002104 20150107
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/12 ; H01L29/786 ; H01L29/66

Abstract:
A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.
Public/Granted literature
- US20170084634A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-03-23
Information query
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