An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.