Invention Grant
- Patent Title: Smart in-module refresh for DRAM
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Application No.: US15299445Application Date: 2016-10-20
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Publication No.: US09761296B2Publication Date: 2017-09-12
- Inventor: Mu-Tien Chang , Krishna Malladi , Dimin Niu , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/406 ; G11C11/4076 ; G11C5/04 ; G06F13/16

Abstract:
A memory (1205) is disclosed. The memory (1205) can includes a stack of dynamic Random Access Memory (DRAM) cores (1210, 1215, 1220, 1225) in a three-dimensional stacked memory architecture (1230). Each of the DRAM cores (1210, 1215, 1220, 1225) can include a plurality of banks (205-1, 205-2, 205-3, 205-4) to store data. The memory (1205) can also include logic layer (1235) which can include an interface (1305) to connect the memory (1205) with a processor (120). The logic layer (1235) can also include a refresh engine (115) that can be used to refresh one of the plurality of banks (205-1, 205-2, 205-3, 205-4) and a Smart Refresh Component (305) that can advise the refresh engine (115) which bank to refresh using an out-of-order per-bank refresh. The Smart Refresh Component (305) can use a logic (415) to identify a farthest bank in the pending transactions in the transaction queue (430) at the time of refresh.
Public/Granted literature
- US20170040050A1 SMART IN-MODULE REFRESH FOR DRAM Public/Granted day:2017-02-09
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