Invention Grant
- Patent Title: Method for controlling potential of susceptor of plasma processing apparatus
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Application No.: US15008855Application Date: 2016-01-28
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Publication No.: US09761419B2Publication Date: 2017-09-12
- Inventor: Koichi Nagami
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2015-027433 20150216
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
In a method of suppressing abnormal discharge through a space between a space and a susceptor, a pulse-modulated high frequency wave is supplied from at least one of a first high frequency power supply and a second high frequency power supply. In addition, a DC voltage, which is pulse-modulated in synchronization with the modulated high frequency wave, is applied to the susceptor from a voltage application unit. A voltage value of the modulated DC voltage is set to reduce a difference between a potential of the substrate placed on an electrostatic chuck and a potential of the susceptor.
Public/Granted literature
- US20160240353A1 METHOD FOR CONTROLLING POTENTIAL OF SUSCEPTOR OF PLASMA PROCESSING APPARATUS Public/Granted day:2016-08-18
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