Invention Grant
- Patent Title: Methods for processing semiconductor devices
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Application No.: US14134199Application Date: 2013-12-19
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Publication No.: US09761474B2Publication Date: 2017-09-12
- Inventor: Sony Varghese
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/683 ; B32B38/10 ; H01L21/78 ; B32B37/08 ; B32B37/12 ; B32B37/18

Abstract:
Methods of forming semiconductor structures include providing a polymeric material over a carrier substrate, bonding another substrate to the polymeric material, and lowering a temperature of the polymeric material to below about 15° C. to separate the another substrate from the carrier substrate. Some methods include forming a polymeric material over a first substrate, securing a second substrate to the first substrate over the polymeric material, cooling the polymeric material to a temperature below a glass transition temperature of the polymeric material, and separating the second substrate from the first substrate. Semiconductor structures may include a polymeric material over at least a portion of a first substrate, an adhesive material over the polymeric material, and a second substrate over the adhesive material. The polymeric material may have a glass transition temperature of about 10° C. or lower and a melting point of about 100° C. or greater.
Public/Granted literature
- US20150179493A1 METHODS AND STRUCTURES FOR PROCESSING SEMICONDUCTOR DEVICES Public/Granted day:2015-06-25
Information query
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