Invention Grant
- Patent Title: Thin-film transistor, method for manufacturing the same and display device comprising the same
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Application No.: US14101144Application Date: 2013-12-09
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Publication No.: US09761650B2Publication Date: 2017-09-12
- Inventor: SeYeoul Kwon , MinGu Cho , Sangcheon Youn
- Applicant: LG Display Co. Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2012-0155587 20121227; KR10-2013-0146139 20131128
- Main IPC: H01L31/036
- IPC: H01L31/036 ; H01L27/32 ; H01L29/786 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49

Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.
Public/Granted literature
- US20140183476A1 THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME Public/Granted day:2014-07-03
Information query
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