公开(公告)号：US11283042B2

公开(公告)日：2022-03-22

申请号：US16135901

申请日：2018-09-19

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyokang Lee ,  MinGu Cho ,  SangHoon Lee

IPC: H01L51/52 ,  H01L27/32 ,  H01L27/12 ,  H01L51/56 ,  H01L51/50

Abstract: Disclosed is a display apparatus including a transistor substrate including an emission part overlapping a plurality of organic light emitting devices and a peripheral part surrounding the emission part, a plurality of color filters disposed to respectively correspond to the plurality of organic light emitting devices at the emission part, and a plurality of spacer members spaced apart from one another and disposed to surround the plurality of organic light emitting devices at the peripheral part. Accordingly, the display apparatus is protected from an external impact, and heat transferred to the inside of the display apparatus is easily dissipated to the outside.

公开(公告)号：US09761650B2

公开(公告)日：2017-09-12

申请号：US14101144

申请日：2013-12-09

Applicant: LG Display Co. Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L31/036 ,  H01L27/32 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L31/036

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.

公开(公告)号：US09478666B2

公开(公告)日：2016-10-25

申请号：US14960265

申请日：2015-12-04

Applicant: LG Display Co., Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L29/10 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

公开(公告)号：US20140159037A1

公开(公告)日：2014-06-12

申请号：US14095617

申请日：2013-12-03

Applicant: LG Display Co., Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L27/12

CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括以共面构造形成在基板上的氧化物半导体层，栅电极，源电极和漏电极。 第一导电构件与氧化物半导体层直接接触并与源电极直接接触。 第二导电构件与氧化物半导体层直接接触并与漏电极直接接触。 第一导电构件和第二导电构件被布置成降低氧化物半导体层的沟道区域与源极和漏极之间的电阻。

公开(公告)号：US20160087108A1

公开(公告)日：2016-03-24

申请号：US14960265

申请日：2015-12-04

Applicant: LG Display Co., Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L29/786 ,  G02F1/167 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括以共面构造形成在基板上的氧化物半导体层，栅电极，源电极和漏电极。 第一导电构件与氧化物半导体层直接接触并与源电极直接接触。 第二导电构件与氧化物半导体层直接接触并与漏电极直接接触。 第一导电构件和第二导电构件被布置成降低氧化物半导体层的沟道区域与源极和漏极之间的电阻。

公开(公告)号：US09231107B2

公开(公告)日：2016-01-05

申请号：US14095617

申请日：2013-12-03

Applicant: LG Display Co., Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L29/10 ,  H01L29/786

CPC classification number: H01L29/78618 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括以共面构造形成在基板上的氧化物半导体层，栅电极，源电极和漏电极。 第一导电构件与氧化物半导体层直接接触并与源电极直接接触。 第二导电构件与氧化物半导体层直接接触并与漏电极直接接触。 第一导电构件和第二导电构件被布置成降低氧化物半导体层的沟道区域与源极和漏极之间的电阻。

公开(公告)号：US20140183476A1

公开(公告)日：2014-07-03

申请号：US14101144

申请日：2013-12-09

Applicant: LG Display Co. Ltd.

Inventor： SeYeoul Kwon ,  MinGu Cho ,  Sangcheon Youn

IPC: H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L31/036

Abstract: A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.

Abstract translation: 提供薄膜晶体管，制造薄膜晶体管的方法以及包括薄膜晶体管的显示装置。 薄膜晶体管包括形成在氧化物半导体层上的栅电极，使得氧化物半导体层的第一表面面向栅电极。 源电极和漏电极分别电连接到氧化物半导体层。 氧化物半导体层，栅电极，源电极和漏电极以共面晶体管配置布置。 遮光元件还被布置成将氧化物半导体层的第二表面与外部光屏蔽。