Invention Grant
- Patent Title: Semiconductor device with embedded non-volatile memory and method of fabricating semiconductor device
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Application No.: US14923409Application Date: 2015-10-26
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Publication No.: US09761680B2Publication Date: 2017-09-12
- Inventor: Dongdong Li , Ko-Chi Chen , Shen-De Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/423 ; H01L27/11534 ; H01L29/66

Abstract:
The present invention provides a semiconductor device, including a substrate with a memory region and a logic region, the substrate having a recess disposed in the memory region, a logic gate stack disposed in the logic region, and a non-volatile memory disposed in the recess. The non-volatile memory includes at least two floating gates and at least two control gates disposed on the floating gates, where each floating gate has a step-shaped bottom, and the step-shaped bottom includes a first bottom surface and a second bottom surface lower than the first bottom surface.
Public/Granted literature
- US20170117372A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-04-27
Information query
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