Invention Grant
- Patent Title: Thin film transistor and its manufacturing method, array substrate and its manufacturing method, and display device
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Application No.: US14764307Application Date: 2014-12-17
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Publication No.: US09761731B2Publication Date: 2017-09-12
- Inventor: Chunping Long , Yinan Liang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201410409198 20140819
- International Application: PCT/CN2014/094114 WO 20141217
- International Announcement: WO2016/026246 WO 20160225
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/786 ; H01L27/12 ; H01L21/02 ; H01L21/027 ; H01L21/265 ; H01L21/283 ; H01L21/3065 ; H01L23/31 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/66 ; H01L21/3213 ; H01L27/32

Abstract:
A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film transistor includes a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer. The gate insulation layer is provided above the active layer, the gate, the source electrode and the drain electrode are provided on a same layer above the gate insulation layer, the active layer and the source electrode are connected through a first connection electrode, and the active layer and the drain electrode are connected through a second connection electrode. The thin film transistor can be formed by three times of patterning processes, by which the process time period is shortened, the process yield is improved, and the process cost is reduced, and so on.
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