Light-emitting assembly, lighting device, display panel, and display device having light-emitting diodes with thermistor controlled brightness

    公开(公告)号:US11250772B2

    公开(公告)日:2022-02-15

    申请号:US16067598

    申请日:2017-12-15

    IPC分类号: G09G3/3258 G09G3/3225

    摘要: A light-emitting assembly contains a light-emitting diode and a driving circuit configured to provide a driving current for driving the light-emitting diode to emit a light. The driving circuit comprises a thermistor, which is coupled to the light-emitting diode and configured to have an electrical resistance thereof altering with a change of a temperature of the light-emitting assembly to thereby adjust an intensity of the driving current. The thermistor can be a metal thermistor, a negative-temperature coefficient thermistor, a critical-temperature thermistor, or a positive-temperature coefficient thermistor. The light-emitting assembly can automatically adjust a brightness of the light emitted by the light-emitting diode to be within an expected range, causing an improved working life and reliability. The light-emitting assembly can be employed in a lighting device or a display panel.

    Mask frame assembly, evaporation method, and array substrate

    公开(公告)号:US10337097B2

    公开(公告)日:2019-07-02

    申请号:US15262151

    申请日:2016-09-12

    IPC分类号: C23C14/08 C23C14/04

    摘要: A mask frame assembly, an evaporation method and an array substrate are provided. The mask frame assembly according to the disclosure includes a frame, a covering mask and at least two evaporation masks, the evaporation masks are sequentially arranged on the frame with a gap between two adjacent evaporation masks. A first groove is arranged at a location corresponding to the gap in the frame. The first groove includes a first groove welding portion and a first groove weldless portion, the evaporation mask includes a first evaporation sub-mask corresponding to the first groove welding portion and a second evaporation sub-mask corresponding to the first groove weldless portion; and an edge of the first evaporation sub-mask and an edge of the first groove welding portion coincide.

    Threshold voltage compensation circuit of thin film transistor and method for the same, shift register, and display device
    4.
    发明授权
    Threshold voltage compensation circuit of thin film transistor and method for the same, shift register, and display device 有权
    薄膜晶体管的阈值电压补偿电路及其方法,移位寄存器和显示器件

    公开(公告)号:US09418756B2

    公开(公告)日:2016-08-16

    申请号:US14235670

    申请日:2013-06-24

    IPC分类号: H03L5/00 G11C19/28 G09G3/32

    摘要: Provided are a threshold voltage compensation circuit of TFT and a method for the same, a shift register and a display device. The threshold voltage compensation circuit includes an input terminal, an output terminal connected to the source of the thin film transistor, a first resistor to a Kth resistor connected in series, and Kth connectable link and at least one first connectable link. Since a voltage dividing circuit having connectable links divides the voltage input to the source of the thin film transistor, such that the gate-source voltage of the thin film transistor can be changed by changing the voltage of the source of the thin film transistor when the voltage of the gate of the thin film transistor is maintained unchanged, so as to control a leakage current of the thin film transistor under a turn-off state, such that the thin film transistor can be turned off normally.

    摘要翻译: 提供TFT的阈值电压补偿电路及其方法,移位寄存器和显示装置。 阈值电压补偿电路包括输入端子,连接到薄膜晶体管的源极的输出端子,串联连接的第K个电阻器的第一电阻器和第K个可连接链路和至少一个第一可连接链路。 由于具有可连接链路的分压电路将输入的电压分隔成薄膜晶体管的源极,所以可以通过改变薄膜晶体管的源极的电压来改变薄膜晶体管的栅源电压 薄膜晶体管的栅极的电压保持不变,以便在关断状态下控制薄膜晶体管的漏电流,使得薄膜晶体管可以正常关断。

    SHIFT REGISTER, GATE DRIVING CIRCUIT AND REPAIRING METHOD THEREFOR, AND DISPLAY DEVICE
    5.
    发明申请
    SHIFT REGISTER, GATE DRIVING CIRCUIT AND REPAIRING METHOD THEREFOR, AND DISPLAY DEVICE 有权
    移位寄存器,门驱动电路及其修理方法及其显示装置

    公开(公告)号:US20150109285A1

    公开(公告)日:2015-04-23

    申请号:US14364176

    申请日:2013-05-22

    发明人: Yinan Liang

    IPC分类号: G09G3/00

    摘要: A shift register (10), a gate driving circuit and a repairing method therefor, and a display device. The shift register (10) comprises a shift register module (21), a repairing module (22), a first connectable link (L1) arranged between the exciting signal input terminal (P100) of the shift register (10) and the exciting signal input terminals (P210, P220) of these two modules, and a second connectable link (L2) arranged between the output terminal (P101) of the shift register (10) and the output terminals (P211, P221) of these two modules; the shift register module (21) is configured to output a clock signal inputted at the first clock signal input terminal via its own output terminal (211) according to an exciting signal received at its own exciting signal input terminal (P210); the repairing module (22) is configured to output an exciting signal received at its own exciting signal input terminal (P220) after delaying the same by a half clock period via its own output terminal (P221) in a case in which a malfunction occurs in the shift register module (21). Since the shift register module (21) is replaced by the repairing module (22) in a case in which the shift register module (21) has a malfunction, the subsequent shift registers can operate properly.

    摘要翻译: 移位寄存器(10),门驱动电路及其修理方法以及显示装置。 移位寄存器(10)包括移位寄存器模块(21),修复模块(22),布置在移位寄存器(10)的激励信号输入端(P100)和激励信号之间的第一可连接链路(L1) 这两个模块的输入端子(P210,P220)和布置在移位寄存器(10)的输出端子(P101)和这两个模块的输出端子(P211,P221)之间的第二可连接链路(L2) 移位寄存器模块(21)被配置为根据在其自身的激励信号输入端子(P210)处接收的激励信号,经由其自身的输出端子(211​​)输出在第一时钟信号输入端子输入的时钟信号; 修理模块(22)被配置为在其发生故障的情况下经由其自身的输出端子(P221)将其自身的激励信号输入端子(P220)所接收的激励信号延迟半个时钟周期 移位寄存器模块(21)。 由于在移位寄存器模块(21)发生故障的情况下,由修理模块(22)替换移位寄存器模块(21),所以随后的移位寄存器可以正常工作。

    Thin film transistor, array substrate, and manufacturing method thereof
    6.
    发明授权
    Thin film transistor, array substrate, and manufacturing method thereof 有权
    薄膜晶体管,阵列基板及其制造方法

    公开(公告)号:US08963157B2

    公开(公告)日:2015-02-24

    申请号:US13994244

    申请日:2012-11-13

    发明人: Yinan Liang

    摘要: A thin film transistor, an array substrate, and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer and an active layer sequentially on a substrate, and forming an active region through a patterning process; forming a gate insulating layer and a gate electrode sequentially; forming Ni deposition openings; forming a dielectric layer having source/drain contact holes in a one-to-one correspondence with the Ni deposition openings; and forming source/drain electrodes which are connected with the active region via the source/drain contact holes and the Ni deposition openings.

    摘要翻译: 薄膜晶体管,阵列基板及其制造方法。 制造方法包括:在衬底上依次形成缓冲层和有源层,并通过图案化工艺形成有源区; 依次形成栅极绝缘层和栅电极; 形成Ni沉积开口; 形成具有源极/漏极接触孔的电介质层,其与Ni沉积开口一一对应; 以及通过源/漏接触孔和Ni沉积开口形成与有源区连接的源/漏电极。

    Aging test method and aging test system for light emitting device

    公开(公告)号:US10914781B2

    公开(公告)日:2021-02-09

    申请号:US16329393

    申请日:2018-05-03

    IPC分类号: G01R31/26 H05B45/50 H05B45/00

    摘要: An aging test method for a light emitting device is provided. The aging test method includes: collecting, in an aging process applied to the light emitting device, an initial value of a first characteristic parameter of the light emitting device and an initial test time point; collecting a current value of the first characteristic parameter and a current test time point (step S1); generating a feature line according to the initial value, the current value, the initial test time point, and the current test time point, and calculating a slope of the feature line; determining whether the slope of the feature line is greater than or equal to a predetermined threshold and less than 0, and returning to the step S1 if a result of the determination is NO; and terminating the aging process applied to the light emitting device if the result of the determination is YES.

    Organic light emitting diode device, display panel and display device

    公开(公告)号:US10424754B2

    公开(公告)日:2019-09-24

    申请号:US15321548

    申请日:2016-03-09

    IPC分类号: H01L51/50 H01L51/52 H01L51/00

    摘要: The embodiments of the present invention provide an organic light emitting diode device, display panel and display device. The existing top emitting series OLED device is improved with a structure of homojunctions; the functional layer of the top emitting series OLED device is also improved. The functional layer comprises a hole injection layer, a hole transport layer, a plurality of light emitting layers, an electron transport layer and an electron injection layer sequentially arranged from the anode. A charge generation layer A and a charge generation layer B are arranged between two directly adjacent light emitting layers. A homojunction is applied in each light emitting unit of the top emitting series OLED device, reducing the types of organic materials and the carrier injection barrier, improving the injection of carriers and the efficiency of the device. The driving voltage of the device is thus reduced.