Invention Grant
- Patent Title: Silicon carbide-tantalum carbide composite and susceptor
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Application No.: US14652210Application Date: 2014-01-28
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Publication No.: US09764992B2Publication Date: 2017-09-19
- Inventor: Masato Shinohara
- Applicant: TOYO TANSO CO., LTD.
- Applicant Address: JP Osaka-shi
- Assignee: TOYO TANSO CO., LTD.
- Current Assignee: TOYO TANSO CO., LTD.
- Current Assignee Address: JP Osaka-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2013-021166 20130206; JP2013-021167 20130206; JP2013-021168 20130206
- International Application: PCT/JP2014/051821 WO 20140128
- International Announcement: WO2014/123036 WO 20140814
- Main IPC: C04B41/89
- IPC: C04B41/89 ; C04B35/52 ; C04B41/50 ; C30B29/36 ; C04B41/52 ; C30B35/00 ; H01L21/687 ; C23C16/458 ; H01L21/683 ; C04B41/00 ; C04B41/45 ; C04B41/53

Abstract:
Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20); and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.
Public/Granted literature
- US20150321966A1 SILICON CARBIDE-TANTALUM CARBIDE COMPOSITE AND SUSCEPTOR Public/Granted day:2015-11-12
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