Invention Grant
- Patent Title: Bias circuit for a high power radio frequency switching device
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Application No.: US14196987Application Date: 2014-03-04
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Publication No.: US09768770B2Publication Date: 2017-09-19
- Inventor: Charles F. Campbell
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/687 ; H03K17/16

Abstract:
Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off.
Public/Granted literature
- US20150256172A1 BIAS CIRCUIT FOR A HIGH POWER RADIO FREQUENCY SWITCHING DEVICE Public/Granted day:2015-09-10
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