Invention Grant
- Patent Title: Selective patterning of an integrated fluxgate device
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Application No.: US15072852Application Date: 2016-03-17
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Publication No.: US09771261B1Publication Date: 2017-09-26
- Inventor: Lee Alan Stringer , Mona Eissa , Byron J. R. Shulver , Sopa Chevacharoenkul , Mark R. Kimmich , Sudtida Lavangkul , Mark L. Jenson
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R33/04
- IPC: G01R33/04 ; B81C1/00 ; G01R33/00

Abstract:
A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
Public/Granted literature
- US20170267521A1 Selective Patterning of an Integrated Fluxgate Device Public/Granted day:2017-09-21
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