Invention Grant
- Patent Title: Semiconductor devices having airgaps and methods of manufacturing the same
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Application No.: US14692197Application Date: 2015-04-21
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Publication No.: US09773795B2Publication Date: 2017-09-26
- Inventor: Jae-Hwang Sim , Jinhyun Shin , HoJun Seong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2012-0078372 20120718
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/11521 ; H01L29/06 ; H01L21/764 ; H01L29/788 ; H01L27/11524 ; H01L27/11517 ; H01L27/11563 ; H01L21/762

Abstract:
Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction.
Public/Granted literature
- US20150228660A1 SEMICONDUCTOR DEVICES HAVING AIRGAPS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-08-13
Information query
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