A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a principal surface and a back surface, a silicon carbide semiconductor layer having the first conductivity type and disposed on the principal surface, barrier regions having a second conductivity type and disposed within the silicon carbide semiconductor layer, an edge termination region having the second conductivity type and disposed within the silicon carbide semiconductor layer, the edge termination region enclosing the barrier regions, a first electrode disposed on the silicon carbide semiconductor layer, and a second electrode disposed on the back surface, wherein each of the barrier regions has a polygonal boundary with the silicon carbide semiconductor layer, and each of sides of the polygonal boundary has an angle of 0° to 5° inclusive relative to direction of crystal orientations of the semiconductor substrate.