- 专利标题： Electron emission device and transistor provided with the same
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申请号： US15503539申请日： 2015-10-02
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公开(公告)号： US09779906B2公开(公告)日： 2017-10-03
- 发明人: Tsuyoshi Ishikawa , Takashi Katsuno , Narumasa Soejima
- 申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 申请人地址： JP Nagakute-shi
- 专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 当前专利权人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- 当前专利权人地址： JP Nagakute-shi
- 代理机构： Oliff PLC
- 优先权： JP2014-234782 20141119
- 国际申请： PCT/JP2015/078115 WO 20151002
- 国际公布： WO2016/080091 WO 20160526
- 主分类号： H01J29/48
- IPC分类号： H01J29/48 ; H01J1/30 ; H01J1/34 ; H01J1/35 ; H01J1/304 ; H01S3/16
摘要：
An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
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