A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.