Invention Grant
- Patent Title: Power cell and power cell circuit for a power amplifier
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Application No.: US13731873Application Date: 2012-12-31
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Publication No.: US09780211B2Publication Date: 2017-10-03
- Inventor: Chewn-Pu Jou , Tzu-Jin Yeh , Chia-Chung Chen
- Applicant: Chewn-Pu Jou , Tzu-Jin Yeh , Chia-Chung Chen
- Applicant Address: TW Hsinshu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinshu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/66

Abstract:
A power cell includes a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate. The fin includes a first dopant type. The power cell further includes at least one isolation region over the substrate between the fin and an adjacent fin. The power cell further includes a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a doped region in the fin, wherein the doped region has a second dopant type different from the first dopant type and the doped region defines a channel region in the fin.
Public/Granted literature
- US20140183660A1 POWER CELL AND POWER CELL CIRCUIT FOR A POWER AMPLIFIER Public/Granted day:2014-07-03
Information query
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