- 专利标题: Semiconductor device with air gaps and method for fabricating the same
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申请号: US14567756申请日: 2014-12-11
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公开(公告)号: US09786598B2公开(公告)日: 2017-10-10
- 发明人: Eun-Jeong Kim , Jin-Yul Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: I P & T Group LLP
- 优先权: KR10-2014-0095041 20140725
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L23/528 ; H01L21/764 ; H01L23/532 ; H01L23/535 ; H01L23/522
摘要:
A semiconductor device includes: a first plug; a bit line which is in contact with the first plug and over the first plug and extended in one direction; a second plug including a first part adjacent to the bit line and a second part adjacent to the first plug; a double air gap which is disposed between the first part of the second plug and the bit line and includes a first air gap surrounding the first part of the second plug and a second air gap parallel to sidewalls of the bit line; and a capping layer suitable for capping the first and second air gaps.
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