- 专利标题： Semiconductor memory device having a heat insulating mechanism
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申请号： US14842313申请日： 2015-09-01
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公开(公告)号： US09788463B2公开(公告)日： 2017-10-10
- 发明人: Yasuyuki Ozawa , Fuminori Kimura , Masaaki Niijima , Masahiro Iijima , Yoshiharu Matsuda , Kenichi Sawanaka , Kazuhiro Yoshida
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Tokyo
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2015-051151 20150313
- 主分类号： H05K7/20
- IPC分类号： H05K7/20
摘要：
A semiconductor memory device includes a semiconductor memory unit, a memory controller, a cover unit having a first portion covering the semiconductor memory unit and a second portion covering the memory controller, a first heat conduction member disposed between the semiconductor memory unit and the first portion of the cover unit, and a second heat conduction member disposed between the memory controller and the second portion of the cover. The cover unit has a gap formed between the first and second portions.
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