Invention Grant
- Patent Title: Semiconductor integrated circuit device and method of regulating output voltage thereof
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Application No.: US14805550Application Date: 2015-07-22
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Publication No.: US09791873B2Publication Date: 2017-10-17
- Inventor: Hirofumi Harada , Shinjiro Kato
- Applicant: SEIKO INSTRUMENTS INC.
- Applicant Address: JP
- Assignee: SII Semiconductor Corporation
- Current Assignee: SII Semiconductor Corporation
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2014-156502 20140731
- Main IPC: H02M3/156
- IPC: H02M3/156 ; H02M1/00 ; G05F1/46

Abstract:
A semiconductor integrated circuit device includes a PMOS output element having a source electrode connected to a power supply terminal and a drain electrode connected to an output voltage terminal from which an output voltage is supplied. A voltage dividing circuit has resistors for dividing the supplied output voltage to produce a divided voltage. A reference voltage circuit generates a reference voltage and has a memory element whose threshold voltage determines the reference voltage. The reference voltage circuit has a regulating input terminal connected to the memory element to change the threshold voltage of the memory element. An error amplifier is supplied with the divided voltage and the reference voltage to generate a voltage that is applied to a gate electrode of the PMOS output element. The voltage is amplified depending on a difference between the divided voltage and the reference voltage.
Public/Granted literature
- US20160033981A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF REGULATING OUTPUT VOLTAGE THEREOF Public/Granted day:2016-02-04
Information query
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