Invention Grant
- Patent Title: Flash memory system and word line interleaving method thereof
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Application No.: US14459736Application Date: 2014-08-14
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Publication No.: US09792990B2Publication Date: 2017-10-17
- Inventor: Yongjune Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0092586 20100920
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/10 ; G11C16/04 ; H01L27/1157 ; H01L27/11582

Abstract:
Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
Public/Granted literature
- US20140355348A1 FLASH MEMORY SYSTEM AND WORD LINE INTERLEAVING METHOD THEREOF Public/Granted day:2014-12-04
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