Invention Grant
- Patent Title: Reliability improvement of polymer-based capacitors by moisture barrier
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Application No.: US14931822Application Date: 2015-11-03
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Publication No.: US09793106B2Publication Date: 2017-10-17
- Inventor: Honglin Guo , Tim A. Taylor , Jeff A. West , Ricky A. Jackson , Byron Williams
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01G4/14 ; H01L21/02 ; H01G4/224 ; H01L51/00 ; H01G4/18 ; H01L23/31 ; H01L23/00

Abstract:
It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.
Public/Granted literature
- US20160133689A1 RELIABILITY IMPROVEMENT OF POLYMER-BASED CAPACITORS BY MOISTURE BARRIER Public/Granted day:2016-05-12
Information query
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