Invention Grant
- Patent Title: Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method
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Application No.: US14946064Application Date: 2015-11-19
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Publication No.: US09793348B2Publication Date: 2017-10-17
- Inventor: Jan Sonsky
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP05108164 20050906
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06 ; H01L21/762 ; H01L27/12 ; H01L29/267
Abstract:
A method of manufacturing a semiconductor device includes forming trench isolation structures, exposing some of the trench isolation structures 28 to leave others 30 masked, and then selectively etching a buried layer to form a cavity 32 under an active device region 34. The active device region 34 is supported by support regions in the exposed trenches 28. The buried layer may be a SiGe layer on a Si substrate.
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