Improved fin field effect transistor (FinFET) devices and methods for fabrication thereof. In one aspect, a method for fabricating a FinFET device comprises: a silicon substrate on which a silicon epitaxial layer is grown is provided. Sacrificial structures on the substrate are formed from the epitaxial layer. A blanket silicon layer is formed over the sacrificial structures and exposed substrate portions, the blanket silicon layer having upper and lower portions of uniform thickness and intermediate portions interposed between the upper and lower portions of non-uniform thickness and having an angle of formation. An array of semiconducting fins is formed from the blanket silicon layer and a non-conformal layer formed over the blanket layer. The sacrificial structures are removed and the resulting void filled with isolation structures under the channel regions. Source and drain are formed in the source/drain regions during a fin merge of the FinFET.